Semiconducting p-type copper iron oxide thin films deposited by hybrid reactive-HiPIMS plus ECWR and reactive-HiPIMS magnetron plasma system

0531792 - FZÚ 2021 RIV CH eng J - Článek v odborném periodiku
Hubička, Zdeněk - Zlámal, M. - Olejníček, Jiří - Tvarog, Drahoslav - Čada, Martin - Krýsa, J.
Semiconducting p-type copper iron oxide thin films deposited by hybrid reactive-HiPIMS plus ECWR and reactive-HiPIMS magnetron plasma system.
Coatings. Roč. 10, č. 3 (2020), s. 1-14, č. článku 232. E-ISSN 2079-6412
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA MPO FV20580; GA ČR GA17-20008S
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: photocathode film * r-HiPIMS plus ECWR plasma * r-HiPIMS plasma * copper iron oxide * photocurrent
Obor OECD: Materials engineering
Impakt faktor: 2.881, rok: 2020
Způsob publikování: Open access

A reactive high-power impulse magnetron sputtering (r-HiPIMS) and a reactive highpower impulse magnetron sputtering combined with electron cyclotron wave resonance plasma source (r-HiPIMS + ECWR) were used for the deposition of p-type CuFexOy thin films on glass with SnO2F conductive layer (FTO).
Trvalý link: http://hdl.handle.net/11104/0310408