Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures 
with deep quantum wells

M. Mikhailova; G. Zegrya; L. Danilov; E. Ivanov; K. Kalinina; N. Stoyanov; Kh. Salikhov; Yu. Yakovlev; E. Hulicius; A. Hospodkova; J. Pangrac; M. Zikova

doi:10.1117/12.2017124

7 May 2013 Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells

M. Mikhailova, G. Zegrya, L. Danilov, E. Ivanov, K. Kalinina, N. Stoyanov, Kh. Salikhov, Yu. Yakovlev, E. Hulicius, A. Hospodkova, J. Pangrac, M. Zikova

Author Affiliations +

Proceedings Volume 8781, Integrated Optics: Physics and Simulations; 87810K (2013) https://doi.org/10.1117/12.2017124
Event: SPIE Optics + Optoelectronics, 2013, Prague, Czech Republic

Abstract

We report on the observation of superlinear electroluminescence in nanoheterostructures based on GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb quantum well in the active region, grown by metal organic vapor phase epitaxy. Electroluminescence spectra for different driving currents were measured at temperatures of 77 and 300 K. It is shown that such structure exhibits superlinear dependence of optical power on the drive current and its increase of 2-3 times in the current range 50-200 mA. This occurs due to impact ionization in the Al(As)Sb/InAsSb quantum well in which a large band offset at the interface ΔE_C = 1.27 eV exceeds ionization threshold energy for electrons in the narrow-gap well. Theoretical calculation of the size quantization energy levels is presented, and possible cases of impact ionization, depending on the band offset ΔE_C at the interface and on the quantum well width, are considered. This effect can be used to increase quantum efficiency and optical power of light emitting devices (LEDs, lasers) operating in mid-infrared spectral range, as well as for photovoltaic elements.

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M. Mikhailova, G. Zegrya, L. Danilov, E. Ivanov, K. Kalinina, N. Stoyanov, Kh. Salikhov, Yu. Yakovlev, E. Hulicius, A. Hospodkova, J. Pangrac, and M. Zikova "Enchancemnt of the optical power stimulated by impact ionization in GaSb-based heterostructures with deep quantum wells", Proc. SPIE 8781, Integrated Optics: Physics and Simulations, 87810K (7 May 2013); https://doi.org/10.1117/12.2017124

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KEYWORDS

Quantum wells

Ionization

Electroluminescence

Electrons

Heterojunctions

Interfaces

Mid-IR

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