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Optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO

  1. 1.
    SYSNO0521781
    TitleOptoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO
    Author(s) Remeš, Zdeněk (FZU-D) RID, ORCID
    Chang, Yu-Ying (FZU-D)
    Stuchlíková, The-Ha (FZU-D) RID, ORCID
    Stuchlík, Jiří (FZU-D) RID, ORCID
    Shu, H.H. (TW)
    Source Title Book of Abstracts of the 29th Joint Seminar of the Development of Materials Science in Research and Education (DMS – RE 2019). S. 41-41. - Bratislava : STU Bratislava, 2019 / Behúlová M. ; Kožíšek Z. ; Papánková B.
    Conference 29th Joint Seminar Development of Materials Science in Research and Education (DMS-RE2019), 02.09.2019 - 06.09.2019, Nová Lesná
    Document TypeAbstrakt
    Grant CZ.02.1.01/0.0/0.0/16_019/0000760, XE - EU countries
    EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
    GC19-02858J GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    Languageeng
    CountrySK
    Keywords ZnO * a-SiC:H
    Permanent Linkhttp://hdl.handle.net/11104/0306347
     
Number of the records: 1  

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