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Design of InGaN/GaN MQW structure for scintillator applications
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SYSNO 0496205 Title Design of InGaN/GaN MQW structure for scintillator applications Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hubáček, Tomáš (FZU-D) ORCID
Zíková, Markéta (FZU-D) RID
Dominec, Filip (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Hájek, František (FZU-D) ORCID
Vaněk, Tomáš (FZU-D) ORCID
Jarý, Vítězslav (FZU-D) RID, ORCIDCorespondence/senior Hospodková, Alice - Korespondující autor Source Title Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. S. 256-256. - : University of Warsaw, 2018 Conference International Symposium on Growth of III-Nitrides ISGN-7, 05.08.2018 - 10.08.2018, Warsaw Document Type Abstrakt Grant GA16-11769S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Language eng Country PL Keywords InGaN/GaN * MQW structure * scintillator Permanent Link http://hdl.handle.net/11104/0289031
Number of the records: 1