Number of the records: 1
Increasing scintillator active region thickness by InGaN/GaN QW number
- 1.
SYSNO 0496184 Title Increasing scintillator active region thickness by InGaN/GaN QW number Author(s) Vaněk, Tomáš (FZU-D) ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hubáček, Tomáš (FZU-D) ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Dominec, Filip (FZU-D) RID, ORCID
Zíková, Markéta (FZU-D) RID
Vetushka, Aliaksi (FZU-D) RID, ORCIDCorespondence/senior Vaněk, Tomáš - Korespondující autor Source Title Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. S. 151-151. - : University of Warsaw, 2018 Conference International Symposium on Growth of III-Nitrides ISGN-7, 05.08.2018 - 10.08.2018, Warsaw Document Type Abstrakt Grant LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic GA16-15569S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Language eng Country PL Keywords InGaN/GaN * QW number Permanent Link http://hdl.handle.net/11104/0289013
Number of the records: 1