Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure

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SYSNO	0496160
Title	Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure
Author(s)	Hájek, František (FZU-D)_ORCID Zíková, Markéta (FZU-D)_RID Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Hubáček, Tomáš (FZU-D)_ORCID Oswald, Jiří (FZU-D)_{RID, ORCID}
Corespondence/senior	Hájek, František - Korespondující autor
Source Title	Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. S. 125-125. - : University of Warsaw, 2018
Conference	International Symposium on Growth of III-Nitrides ISGN-7, 05.08.2018 - 10.08.2018, Warsaw
Document Type	Abstrakt
Grant	GA16-11769S GA ČR - Czech Science Foundation (CSF)
	LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
	690599, XE - EU countries
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	PL
Keywords	InGaN/GaN * quantum wells * doping * luminescence
Permanent Link	http://hdl.handle.net/11104/0288966

Number of the records: 1