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Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications
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SYSNO 0477154 Title Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Kuldová, Karla (FZU-D) RID, ORCID
Nikl, Martin (FZU-D) RID, ORCID, SAI
Pacherová, Oliva (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Hubáček, Tomáš (FZU-D) ORCID
Zíková, Markéta (FZU-D) RID
Brůža, P. (CZ)
Pánek, D. (CZ)
Blažek, K. (CZ)
Ledoux, G. (FR)
Dujardin, C. (FR)
Heuken, M. (DE)
Hulicius, Eduard (FZU-D) RID, ORCID, SAISource Title Fourth Conference on Sensors, MEMS, and Electro-Optic Systems. S. 1-15. - Bellingham : SPIE, 2017 / du Plessis M. Conference South African Conference on Sensors, MEMS and Electro-Optical Systems (SMEOS) /4./, 18.09.2016 - 20.09.2016, Skukuza Article number 1003617 Document Type Konferenční příspěvek (zahraniční konf.) Grant LM2015087 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CZ.2.16/3.1.00/24510, XE - EU countries LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-15569S GA ČR - Czech Science Foundation (CSF) 690599, XE - EU countries Institutional support FZU-D - RVO:68378271 Language eng Country US Keywords gallium nitride * indium gallium nitride * quantum wells * scintillators * sensors * luminescence * excitons * scintillation * radiation * resistance Permanent Link http://hdl.handle.net/11104/0273529 File Download Size Commentary Version Access 0477154.pdf 6 459.7 KB Other open-access
Number of the records: 1