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Nanostructures grown by MOVPE InAs/InGaAs/Ga(Sb)As quantum dot and GaN/InGaN quantum well structures
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SYSNO 0463746 Title Nanostructures grown by MOVPE InAs/InGaAs/Ga(Sb)As quantum dot and GaN/InGaN quantum well structures Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Zíková, Markéta (FZU-D) RID
Vyskočil, Jan (FZU-D) RID
Kuldová, Karla (FZU-D) RID, ORCID
Melichar, Karel (FZU-D)
Hubáček, Tomáš (FZU-D) ORCID
Walachová, J. (CZ)
Vaniš, J. (CZ)
Křápek, V. (CZ)
Humlíček, J. (CZ)
Nikl, Martin (FZU-D) RID, ORCID, SAI
Pacherová, Oliva (FZU-D) RID, ORCID
Brůža, P. (CZ)
Pánek, D. (CZ)
Foltynski, B. (DE)
Oeztuerk, M. (CZ)
Heuken, M. (DE)
Hulicius, Eduard (FZU-D) RID, ORCID, SAISource Title GCCCG-1/DKT2016. S. 38. - Dresden : TU Dresden, 2016 Conference German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./, 16.03.2016 - 18.03.2016, Dresden Document Type Abstrakt Grant GA13-15286S GA ČR - Czech Science Foundation (CSF) GP14-21285P GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic LM2011026 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic Institutional support FZU-D - RVO:68378271 Language eng Country DE Keywords MOVPE * InAs quantum dot * GaAsSb SRL * GaInN quantum well * GaN * GaAs Permanent Link http://hdl.handle.net/11104/0262837
Number of the records: 1