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Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures
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SYSNO 0571963 Title Ultrafast infrared laser crystallization of amorphous Si/Ge multilayer structures Author(s) Bulgakov, Alexander (FZU-D) ORCID
Beránek, Jiří (FZU-D)
Volodin, V.A. (RU)
Cheng, Y. (RU)
Levy, Yoann (FZU-D)
Nagisetty, S.S. (DE)
Zukerstein, Martin (FZU-D) ORCID
Popov, A. A. (RU)
Bulgakova, Nadezhda M. (FZU-D) ORCIDCorespondence/senior Bulgakova, Nadezhda M. - Korespondující autor Source Title Materials. Roč. 16, č. 9 (2023). - : MDPI Article number 3572 Document Type Článek v odborném periodiku Grant CZ.02.1.01/0.0/0.0/15_003/0000445, XE - EU countries EF15_003/0000445 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Language eng Country CH Keywords silicon–germanium multilayer structures * thin films * ultrashort infrared laser annealing * selective crystallization * defect accumulation * Raman spectroscopy URL https://hdl.handle.net/11104/0342818 Permanent Link https://hdl.handle.net/11104/0342818 File Download Size Commentary Version Access 0571963.pdf 0 11.6 MB CC licence Publisher’s postprint open-access
Number of the records: 1