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Photoionization and transient Wannier-Stark ladder in silicon: First-principles simulations versus Keldysh theory

  1. 1.
    SYSNO0561201
    TitlePhotoionization and transient Wannier-Stark ladder in silicon: First-principles simulations versus Keldysh theory
    Author(s) Derrien, Thibault (FZU-D) ORCID
    Tancogne-Dejean, N. (DE)
    Zhukov, Vladimir (FZU-D) ORCID
    Appel, H. (DE)
    Rubio, A. (DE)
    Bulgakova, Nadezhda M. (FZU-D) ORCID
    Corespondence/seniorDerrien, Thibault - Korespondující autor
    Source Title Physical Review B. Roč. 104, č. 24 (2021). - : American Physical Society
    Article numberL241201
    Document TypeČlánek v odborném periodiku
    Grant CZ.02.1.01/0.0/0.0/15_003/0000445, XE - EU countries
    EF15_003/0000445 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    CZ.02.1.01/0.0/0.0/15_006/0000674, XE - EU countries
    EF15_006/0000674 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    823897, XE - EU countries
    Institutional supportFZU-D - RVO:68378271
    Languageeng
    CountryUS
    Keywords nonlinear photoionization * semiconductors * Keldysh theory * TDDFT * silicon crystal * ultrashort laser
    URLhttps://hdl.handle.net/11104/0333877
    Permanent Linkhttps://hdl.handle.net/11104/0333877
    FileDownloadSizeCommentaryVersionAccess
    0561201.pdf11.5 MBCC LicencePublisher’s postprintopen-access
     
Number of the records: 1  

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