Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells

Number of the records: 1

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SYSNO	0542725
Title	Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells
Author(s)	Hájek, František (FZU-D)_ORCID Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Hubáček, Tomáš (FZU-D)_ORCID Oswald, Jiří (FZU-D)_{RID, ORCID} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Dominec, Filip (FZU-D)_{RID, ORCID} Horešovský, Robert (FZU-D) Kuldová, Karla (FZU-D)_{RID, ORCID}
Corespondence/senior	Hájek, František - Korespondující autor
Source Title	Journal of Luminescence. Roč. 236, Aug (2021). - : Elsevier
Article number	118127
Document Type	Článek v odborném periodiku
Grant	CZ.02.1.01/0.0/0.0/16_019/0000760, XE - EU countries
	EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
	FW03010298 GA TA ČR - Technology Agency of the Czech Republic (TA ČR), CZ - Czech Republic
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	NL
Keywords	nitrides * impurity * SIMS * InGaN/GaN
URL	http://hdl.handle.net/11104/0320090
Permanent Link	http://hdl.handle.net/11104/0320090

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Number of the records: 1