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Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

  1. 1.
    SYSNO0541992
    TitleDefect structures in (001) zincblende GaN/3C-SiC nucleation layers
    Author(s) Vacek, Petr (UFM-A) ORCID, RID
    Frentrup, M. (GB)
    Lee, L. Y. (GB)
    Massabuau, Fabien C. P. (GB)
    Kappers, Menno J. (GB)
    Wallis, David J. (GB)
    Gröger, Roman (UFM-A) RID, ORCID
    Oliver, Rachel A. (GB)
    Corespondence/seniorVacek, Petr - Korespondující autor
    Source Title Journal of Applied Physics. Roč. 129, č. 15 (2021)
    Article number155306
    Document TypeČlánek v odborném periodiku
    Grant EF16_027/0008056 GA MŠk - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
    Institutional supportUFM-A - RVO:68081723
    Languageeng
    CountryUS
    Keywords stacking faults * gallium nitride * transmission electron microscopy
    URLhttps://aip.scitation.org/doi/10.1063/5.0036366
    Permanent Linkhttp://hdl.handle.net/11104/0319746
     
Number of the records: 1