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Properties of boron-doped (113) oriented homoepitaxial diamond layers
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SYSNO 0541744 Title Properties of boron-doped (113) oriented homoepitaxial diamond layers Author(s) Mortet, Vincent (FZU-D) RID, ORCID
Taylor, Andrew (FZU-D) RID, ORCID
Lambert, Nicolas (FZU-D) ORCID, RID
Gedeonová, Zuzana (FZU-D) ORCID
Fekete, Ladislav (FZU-D) RID, ORCID
Lorinčík, J. (CZ)
Klimša, Ladislav (FZU-D) ORCID
Kopeček, Jaromír (FZU-D) RID, ORCID
Hubík, Pavel (FZU-D) RID, ORCID
Šobáň, Zbyněk (FZU-D) RID, ORCID
Laposa, A. (CZ)
Davydova, Marina (FZU-D) RID, ORCID
Voves, J. (CZ)
Pošta, A. (CZ)
Povolný, V. (CZ)
Hazdra, P. (CZ)Corespondence/senior Mortet, Vincent - Korespondující autor Source Title Diamond and Related Materials. Roč. 111, Jan (2021). - : Elsevier Article number 108223 Document Type Článek v odborném periodiku Grant CZ.02.1.01/0.0/0.0/16_019/0000760, XE - EU countries EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic LM2018110 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA20-11140S GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic GA17-05259S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Language eng Country CH Keywords boron-doped diamond * electrical properties * (113) oriented epitaxial diamond URL https://doi.org/10.1016/j.diamond.2020.108223 Permanent Link http://hdl.handle.net/11104/0319277
Number of the records: 1