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Atomic-scale charge distribution mapping of single substitutional p- and n-type dopants in graphene

  1. 1.
    SYSNO0539691
    TitleAtomic-scale charge distribution mapping of single substitutional p- and n-type dopants in graphene
    Author(s) Mallada Faes, Benjamin Jose (FZU-D) ORCID, RID
    Edalatmanesh, S. (CZ)
    Lazar, P. (CZ)
    López, Roso Redondo Jesús R. (FZU-D) ORCID
    Gallardo Caparrós, Aurelio Jesús (FZU-D) ORCID
    Zbořil, Radek (UOCHB-X) [610/61] ORCID
    Jelínek, Pavel (FZU-D) RID, ORCID
    Švec, Martin (FZU-D) RID, ORCID
    De La Torre Cerdeño, Bruno (FZU-D) ORCID
    Source Title ACS Sustainable Chemistry & Engineering. Roč. 8, č. 8 (2020), s. 3437-3444. - : American Chemical Society
    Document TypeČlánek v odborném periodiku
    Grant AP1601, CZ - Czech Republic
    GA18-09914S GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic
    GX19-27454X GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic
    GJ17-24210Y GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271 ; UOCHB-X - RVO:61388963
    Languageeng
    CountryUS
    Keywords electronic-structure * SPM * graphene * doping * DFT
    URLhttps://doi.org/10.1021/acssuschemeng.9b07623
    Permanent Linkhttp://hdl.handle.net/11104/0317401
     
Number of the records: 1  

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