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Nanocrystalline diamond electrolyte-gates in field effect transistor for a prolific aptasensing HIV-1 tat on hydrogen-terminated surface
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SYSNO 0538344 Title Nanocrystalline diamond electrolyte-gates in field effect transistor for a prolific aptasensing HIV-1 tat on hydrogen-terminated surface Author(s) Ahmad, N.A. (MY)
Rahim, R.A. (MY)
Rezek, Bohuslav (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAI
Ismail, N.S. (MY)
Gopinath, S.Ch.B. (MY)
Ižák, Tibor (FZU-D) RID
Procházka, V. (CZ)
Faudzi, F.N.M. (MY)
Abidin, A.S.Z. (MY)
Maidizn, N.N.M. (MY)Source Title International Journal of Nanoelectronics and Materials. Roč. 13, č. 2 (2020), s. 295-306. - : Universiti Malaysia Perlis Document Type Článek v odborném periodiku Grant CZ.02.1.01/0.0/0.0/16_019/0000760, XE - EU countries EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic Institutional support FZU-D - RVO:68378271 Language eng Country MY Keywords aptamer * electrolyte-gated field effect transistor * HIV-1 Tat * nanocrystalline diamonds URL https://ijneam.unimap.edu.my/images/PDF/IJNEAM%20APR%202020/Vol_13_No_2_2020_7_295-306.pdf Permanent Link http://hdl.handle.net/11104/0316158
Number of the records: 1