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Acquisition of the dopant contrast in semiconductors with slow electrons

  1. 1.
    SYSNO0525062
    TitleAcquisition of the dopant contrast in semiconductors with slow electrons
    Author(s) Frank, Luděk (UPT-D) RID, SAI, ORCID
    Hovorka, Miloš (UPT-D)
    El Gomati, M. M. (GB)
    Müllerová, Ilona (UPT-D) RID, SAI, ORCID
    Mika, Filip (UPT-D) RID, SAI, ORCID
    Mikmeková, Eliška (UPT-D) RID
    Corespondence/seniorFrank, Luděk - Korespondující autor
    Source Title Journal of Electron Spectroscopy and Related Phenomena. Roč. 241, MAY (2020). - : Elsevier
    Article number146836
    Document TypeČlánek v odborném periodiku
    Grant TE01020118 GA TA ČR - Technology Agency of the Czech Republic (TA ČR), CZ - Czech Republic
    LO1212 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
    ED0017/01/01 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    606988, XE - EU countries
    Institutional supportUPT-D - RVO:68081731
    Languageeng
    CountryNL
    Keywords semiconductors * dopant contrast * low energy SEM * PEEM * mirror electron microscopy * surface treatments
    URLhttps://www.sciencedirect.com/science/article/pii/S036820481830135X
    Permanent Linkhttp://hdl.handle.net/11104/0309284
     
Number of the records: 1  

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