Number of the records: 1
Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates
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SYSNO 0509851 Title Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates Author(s) Lee, L.Y. (GB)
Frentrup, M. (GB)
Vacek, Petr (UFM-A) ORCID, RID
Massabuau, Fabien C. P. (GB)
Kappers, Menno J. (GB)
Wallis, David J. (GB)
Oliver, Rachel A. (GB)Source Title Journal of Crystal Growth. Roč. 524, OCT (2019). - : Elsevier Article number 125167 Document Type Článek v odborném periodiku Grant EF16_027/0008056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic Institutional support UFM-A - RVO:68081723 Language eng Country NL Keywords Atomic force microscopy * Nucleation * X-ray diffraction * Metalorganic vapor phase epitaxy * Nitrides * Semiconducting gallium compounds URL https://www.sciencedirect.com/science/article/pii/S0022024819303823?via%3Dihub Permanent Link http://hdl.handle.net/11104/0300844
Number of the records: 1