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Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface
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SYSNO 0502838 Title Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface Author(s) Hubáček, Tomáš (FZU-D) ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Zíková, Markéta (FZU-D) RID
Hájek, František (FZU-D) ORCID
Dominec, Filip (FZU-D) RID, ORCID
Florini, N. (GR)
Komninou, Ph. (GR)
Ledoux, G. (FR)
Dujardin, C. (FR)Corespondence/senior Hospodková, Alice - Korespondující autor Source Title Journal of Crystal Growth. Roč. 507, Feb (2019), s. 310-315. - : Elsevier Document Type Článek v odborném periodiku Grant LM2015087 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-11769S GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic 690599, XE - EU countries Institutional support FZU-D - RVO:68378271 Language eng Country NL Keywords interfaces * MOVPE * quantum wells * nitrides * scintillators Permanent Link http://hdl.handle.net/11104/0294724 File Download Size Commentary Version Access 0502838.pdf 3 1.3 MB Author’s postprint open-access
Number of the records: 1