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Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400 keV Kr and Gd ions
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SYSNO 0497102 Title Damage accumulation and structural modification in c-plane and a-plane GaN implanted with 400 keV Kr and Gd ions Author(s) Macková, Anna (UJF-V) [ONF] RID, ORCID, SAI
Malinský, Petr (UJF-V) [ONF] RID, ORCID, SAI
Jagerová, Adéla (UJF-V) [ONF] ORCID, SAI
Sofer, Z. (CZ)
Klímová, K. (CZ)
Sedmidubský, D. (CZ)
Mikulics, M. (DE)
Bottger, R. (DE)
Akhmadaliev, S. (DE)Corespondence/senior Macková, Anna - Korespondující autor Source Title Surface and Coatings Technology. Roč. 355, SI (2018), s. 22-28. - : Elsevier Conference International Conference on Surface Modification of Materials by Ion Beams (SMMIB), 09.07.2017 - 14.07.2017, Lisbon Document Type Článek v odborném periodiku Grant EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA15-01602S GA ČR - Czech Science Foundation (CSF) Institutional support UJF-V - RVO:61389005 Language eng Country CH Keywords GaN damage accumulation * structure modification in c-plane and a-plane * GaN * RBS channeling studies of implanted GaN Cooperating institutions Univerzita Jana Evangelisty Purkyně v Ústí nad Labem (Czech Republic)
Vysoká škola chemicko-technologická v Praze (Czech Republic)Permanent Link http://hdl.handle.net/11104/0289694
Number of the records: 1