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Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions
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SYSNO 0496731 Title Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions Author(s) Macková, Anna (UJF-V) [ONF] RID, ORCID, SAI
Malinský, Petr (UJF-V) [ONF] RID, ORCID, SAI
Jagerová, Adéla (UJF-V) [ONF] ORCID, SAI
Sofer, Z. (CZ)
Sedmidubský, D. (CZ)
Klímová, K. (CZ)
Bottger, R. (DE)
Akhmadaliev, S. (DE)Corespondence/senior Macková, Anna - Korespondující autor Source Title Surface and Interface Analysis. Roč. 50, č. 11 (2018), s. 1099-1105. - : Wiley Conference 17th European Conference on Applications of Surface and Interface Analysis (ECASIA 2017), 24.09.2017 - 29.09.2017, Monpellier Document Type Článek v odborném periodiku Grant EF16_013/0001812 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LM2015056 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA15-01602S GA ČR - Czech Science Foundation (CSF) Institutional support UJF-V - RVO:61389005 Language eng Country US Keywords damage accumulation in GaN * RBS channeling in ion-modified GaN * structure modification in c-plane and a-plane GaN Cooperating institutions Univerzita Jana Evangelisty Purkyně v Ústí nad Labem (Czech Republic)
Vysoká škola chemicko-technologická v Praze (Czech Republic)Permanent Link http://hdl.handle.net/11104/0289383
Number of the records: 1