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Growth and scintillation properties of 3 in. diameter Ce doped Gd.sub.3./sub.Ga.sub.3./sub.Al.sub.2./sub.O.sub.12./sub. scintillation single crystal

SYSNO	0470883
Title	Growth and scintillation properties of 3 in. diameter Ce doped Gd₃Ga₃Al₂O₁₂ scintillation single crystal
Author(s)	Kamada, K. (JP) Shoji, Y. (JP) Kochurikhin, V.V. (JP) Okumura, S. (JP) Yamamoto, S. (JP) Nagura, A. (JP) Yeom, J.Y. (KR) Kurosawa, S. (JP) Yokota, Y. (JP) Ohashi, Y. (JP) Nikl, Martin (FZU-D)_{RID, ORCID, SAI} Yoshikawa, A. (JP)
Source Title	Journal of Crystal Growth. Roč. 452, Oct (2016), s. 81-84. - : Elsevier
Conference	American Conference on Crystal Growth and Epitaxy /20./ (ACCGE) / 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) / 2nd 2D Electronic Materials Symposium, 02.08.2015 - 07.08.2015, Big Sky, MT
Document Type	Článek v odborném periodiku
Grant	644260, XE - EU countries
	LH14266 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
	GJ15-18300Y GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	NL
Keywords	single crystal growth * oxides * scintillator materials * scintillators
Permanent Link	http://hdl.handle.net/11104/0268397

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Number of the records: 1