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MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm

  1. 1.
    SYSNO0448593
    TitleMOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
    Author(s) Zíková, Markéta (FZU-D) RID
    Hospodková, Alice (FZU-D) RID, ORCID
    Pangrác, Jiří (FZU-D) RID
    Oswald, Jiří (FZU-D) RID, ORCID
    Krčil, Pavel (FZU-D)
    Hulicius, Eduard (FZU-D) RID
    Komninou, Ph. (GR)
    Kioseoglou, J. (GR)
    Source Title Journal of Crystal Growth. Roč. 414, Mar (2015), 167-171. - : Elsevier
    Document TypeČlánek v odborném periodiku
    Grant GA13-15286S GA ČR - Czech Science Foundation (CSF)
    LM2011026 GA MŠk - Ministry of Education, Youth and Sports (MEYS), CZ - Česká republika
    Institutional supportFZU-D - RVO:68378271
    Languageeng
    CountryNL
    Keywords long emission wavelength * photocurrent * InAs quantum dots * MOVPE * GaAsSb layer
    Permanent Linkhttp://hdl.handle.net/11104/0250242