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MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
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SYSNO 0448593 Title MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm Author(s) Zíková, Markéta (FZU-D) RID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Krčil, Pavel (FZU-D)
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Komninou, Ph. (GR)
Kioseoglou, J. (GR)Source Title Journal of Crystal Growth. Roč. 414, Mar (2015), 167-171. - : Elsevier Document Type Článek v odborném periodiku Grant GA13-15286S GA ČR - Czech Science Foundation (CSF) LM2011026 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic Institutional support FZU-D - RVO:68378271 Language eng Country NL Keywords long emission wavelength * photocurrent * InAs quantum dots * MOVPE * GaAsSb layer Permanent Link http://hdl.handle.net/11104/0250242
Number of the records: 1