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GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission
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SYSNO 0367155 Title GaAsSb strain reducing layers for InAs/GaAs quantum dot long wavelength and high efficiency emission Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Vyskočil, Jan (FZU-D) RID
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Hazdra, P. (CZ)Source Title EWMOVPE XIV. S. 105-108. - Wroclaw : Printing house of Wroclaw University of Technology, 2011 / Prazmowska J. Conference European Workshop on Metalorganic Vapor Phase Epitaxy /14./, Wrocław, 05.06.2011-08.06.2011 Document Type Konferenční příspěvek (zahraniční konf.) Grant GAP102/10/1201 GA ČR - Czech Science Foundation (CSF) GA202/09/0676 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) Language eng Country PL Keywords quantum dot * InAs * GaAs * GaAsSb strain reducing layer * photoluminescence Permanent Link http://hdl.handle.net/11104/0006666
Number of the records: 1