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Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments

  1. 1.
    SYSNO0361428
    TitleTesting of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
    Author(s) Hara, K. (JP)
    Affolder, A.A. (GB)
    Allport, P.P. (GB)
    Bates, R. (GB)
    Betancourt, C. (US)
    Böhm, Jan (FZU-D)
    Brown, H. (GB)
    Buttar, C. (GB)
    Carter, J. R. (GB)
    Casse, G. (GB)
    Mikeštíková, Marcela (FZU-D) RID, ORCID
    Source Title Nuclear Instruments & Methods in Physics Research Section A. Roč. 636, č. 1 (2011), "S83"-"S89". - : Elsevier
    Document TypeČlánek v odborném periodiku
    Grant LA08032 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    CEZAV0Z10100502 - FZU-D (2005-2011)
    Languageeng
    CountryNL
    Keywords p-bulk silicon * microstrip * charge collection * radiation damage
    URLhttp://dx.doi.org/10.1016/j.nima.2010.04.090
    Permanent Linkhttp://hdl.handle.net/11104/0198740
     
Number of the records: 1  

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