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Development of n-on-p silicon sensors for very high radiation environments
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SYSNO 0361396 Title Development of n-on-p silicon sensors for very high radiation environments Author(s) Unno, Y. (JP)
Affolder, A.A. (GB)
Allport, P.P. (GB)
Bates, R. (GB)
Betancourt, C. (US)
Böhm, Jan (FZU-D)
Brown, H. (GB)
Buttar, C. (GB)
Carter, J. R. (GB)
Casse, G. (GB)
Mikeštíková, Marcela (FZU-D) RID, ORCIDSource Title Nuclear Instruments & Methods in Physics Research Section A. Roč. 636, č. 1 (2011), "S24"-"S30". - : Elsevier Document Type Článek v odborném periodiku Grant LA08032 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100502 - FZU-D (2005-2011) Language eng Country NL Keywords silicon * micro-strip * ATLAS * SLHC * sensor * radiation damage * p-type * n-in-p URL http://dx.doi.org/10.1016/j.nima.2010.04.080 Permanent Link http://hdl.handle.net/11104/0198717
Number of the records: 1