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InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
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SYSNO 0359526 Title InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Vyskočil, Jan (FZU-D) RID
Oswald, Jiří (FZU-D) RID, ORCID
Vetushka, Aliaksi (FZU-D) RID, ORCID
Caha, O. (CZ)
Hazdra, P. (CZ)
Kuldová, Karla (FZU-D) RID, ORCID
Hulicius, Eduard (FZU-D) RID, ORCID, SAISource Title Journal of Crystal Growth. Roč. 317, č. 1 (2011), s. 39-42. - : Elsevier Document Type Článek v odborném periodiku Grant GAP102/10/1201 GA ČR - Czech Science Foundation (CSF) GAP108/10/0253 GA ČR - Czech Science Foundation (CSF) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA202/09/0676 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) Language eng Country NL Keywords low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III–V materials Permanent Link http://hdl.handle.net/11104/0197302
Number of the records: 1