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Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

  1. 1.
    SYSNO0357129
    TitleMicroscopic analysis of the valence band and impurity band theories of (Ga,Mn)As
    Author(s) Mašek, Jan (FZU-D) RID
    Máca, František (FZU-D) RID, ORCID
    Kudrnovský, Josef (FZU-D) RID, ORCID
    Makarovský, O. (GB)
    Eaves, L. (GB)
    Campion, R. P. (GB)
    Edmonds, K. W. (GB)
    Rushforth, A.W. (GB)
    Foxon, C. T. (GB)
    Gallagher, B. L. (GB)
    Novák, Vít (FZU-D) RID, ORCID
    Sinova, Jairo (FZU-D) RID, ORCID
    Jungwirth, Tomáš (FZU-D) RID, ORCID
    Source Title Physical Review Letters. Roč. 105, č. 22 (2010), 227202/1-227202/4. - : American Physical Society
    Document TypeČlánek v odborném periodiku
    Grant GA202/07/0456 GA ČR - Czech Science Foundation (CSF)
    LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    215368, XE - EU countries
    214499, XE - EU countries
    AP0801, CZ - Czech Republic
    CEZAV0Z10100520 - FZU-D (2005-2011)
    Languageeng
    CountryUS
    Keywords gallium arsenide * semiconductors
    Permanent Linkhttp://hdl.handle.net/11104/0195468
     
Number of the records: 1  

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