Number of the records: 1  

Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors

  1. 1.
    SYSNO0353864
    TitleAnisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors
    Author(s) Vašek, Petr (FZU-D) RID
    Svoboda, Pavel (FZU-D)
    Novák, Vít (FZU-D) RID, ORCID
    Cukr, Miroslav (FZU-D)
    Výborný, Karel (FZU-D) RID, ORCID
    Jurka, Vlastimil (FZU-D) RID, ORCID
    Stuchlík, Jiří (FZU-D) RID, ORCID
    Orlita, Milan (FZU-D)
    Maude, D. K. (FR)
    Source Title Journal of Superconductivity and Novel Magnetism. Roč. 23, č. 6 (2010), 1161-1163. - : Springer
    Document TypeČlánek v odborném periodiku
    Grant KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    MEB020928 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Egide 19535NF , XE - EU countries
    CEZAV0Z10100521 - FZU-D (2005-2011)
    Languageeng
    CountryUS
    Keywords GaMnAs * anisotropic magnetoresistance * hydrogenation
    Permanent Linkhttp://hdl.handle.net/11104/0192992
     
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.