Number of the records: 1
The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
- 1.
SYSNO 0353061 Title The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene Author(s) Kalbáč, Martin (UFCH-W) RID, ORCID
Reina-Cecco, A. (US)
Farhat, H. (US)
Kong, J. (US)
Kavan, Ladislav (UFCH-W) RID, ORCID
Dresselhaus, M. S. (US)Source Title ACS Nano. Roč. 4, č. 10 (2010), s. 6055-6063. - : American Chemical Society Document Type Článek v odborném periodiku Grant IAA400400911 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) IAA400400804 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) KAN200100801 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) ME09060 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GC203/07/J067 GA ČR - Czech Science Foundation (CSF) GAP204/10/1677 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z40400503 - UFCH-W (2005-2011) Language eng Country US Keywords graphene * Raman spectroscopy * spectroelectrochemistry Permanent Link http://hdl.handle.net/11104/0192407
Number of the records: 1