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Anomalous charge current transport in semi-insulatingGaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface
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SYSNO 0349319 Title Anomalous charge current transport in semi-insulatingGaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface Author(s) Dubecký, F. (SK)
Hubík, Pavel (FZU-D) RID, ORCID
Gombia, E. (IT)
Zat'ko, B. (SK)
Kindl, Dobroslav (FZU-D) RID
Dubecký, M. (SK)
Boháček, P. (SK)Source Title SURFINT-SREN II. S. 19-22. - Bratislava : Comenius University, 2010 / Brunner R. Conference Progress in Applied Surface, Interface and Thin Film Science 2009, Florence, 16.11.2009-19.11.2009 Document Type Konferenční příspěvek (zahraniční konf.) Grant GA202/07/0525 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) Language eng Country SK Keywords SI-GaAs * X-ray detectors * charge transport * metallization Permanent Link http://hdl.handle.net/11104/0189588
Number of the records: 1