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Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface
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SYSNO 0349314 Title Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface Author(s) Dubecký, F. (SK)
Kováč, J. (SK)
Mudroň, J. (SK)
Hubík, Pavel (FZU-D) RID, ORCID
Dubecký, M. (SK)
Gombia, E. (IT)Source Title APCOM 2010. S. 29-32. - Bratislava : Slovak University of Technology, 2010 / Vajda J. ; Weis M. Conference International Conference on Applied Physics of Condensed Matter /16./, Malá Lučivná, 16.06.2010-18.06.2010 Document Type Konferenční příspěvek (zahraniční konf.) CEZ AV0Z10100521 - FZU-D (2005-2011) Language eng Country SK Keywords SI-GaAs * detectors * photocurrent * blocking electrodes Permanent Link http://hdl.handle.net/11104/0189585
Number of the records: 1