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Raman scattering in silicon disordered by gold ion implantation
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SYSNO 0346873 Title Raman scattering in silicon disordered by gold ion implantation Author(s) Lavrentiev, Vasyl (UJF-V) [ONF] RID, ORCID, SAI
Vacík, Jiří (UJF-V) [ONF] RID, ORCID, SAI
Vorlíček, Vladimír (FZU-D) RID
Voseček, Václav (UJF-V) [ONF] RIDSource Title Physica Status Solidi B : Basic Solid State Physics. Roč. 247, č. 8 (2010), s. 2022-2026. - : Wiley Conference 8th International Conference on Optics of Surfaces and Interfaces (OSI-VIII), Ischia, 07.09.2009-11.09.2009 Document Type Článek v odborném periodiku Grant IAA200480702 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) IAA400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) KAN400480701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR), CZ - Czech Republic GA106/09/1264 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10480505 - UJF-V (2005-2011) AV0Z10100520 - FZU-D (2005-2011) Language eng Country DE Keywords ion implantation * Raman spectra * Rutherford backscattering spectroscopy Permanent Link http://hdl.handle.net/11104/0187786
Number of the records: 1