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Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
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SYSNO 0342123 Title Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface Author(s) Mikhailova, M. P. (RU)
Ivanov, E.V. (RU)
Moiseev, K. D. (RU)
Yakovlev, Yu. P. (RU)
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Šimeček, Tomislav (FZU-D)Source Title Semiconductors. Roč. 44, č. 1 (2010), 66-71 Document Type Článek v odborném periodiku CEZ AV0Z10100521 - FZU-D (2005-2011) Language eng Country RU Keywords electroluninescence * MOVPE * GaSb * InAs * quantum well Permanent Link http://hdl.handle.net/11104/0184942
Number of the records: 1