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LPE growth of InP layers from rare-earth treated melts for radiation detector structures
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SYSNO 0341444 Title LPE growth of InP layers from rare-earth treated melts for radiation detector structures Author(s) Grym, Jan (URE-Y)
Procházková, Olga (URE-Y)
Zavadil, Jiří (URE-Y) RID
Žďánský, Karel (URE-Y)Source Title Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 165, 1-2 (2009), s. 94-97. - : Elsevier Document Type Článek v odborném periodiku Grant GP102/08/P617 GA ČR - Czech Science Foundation (CSF), CZ - Czech Republic GA102/06/0153 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z20670512 - URE-Y (2005-2011) Language eng Country CH Keywords semiconductor technology * rare earth elements * III-V semiconductors Permanent Link http://hdl.handle.net/11104/0184438
Number of the records: 1