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Detectors of Gamma Rays and Alpha Particles Based on Ta-Doped InP Converted to the Semi-Insulating State by Annealing

  1. 1.
    SYSNO0341437
    TitleDetectors of Gamma Rays and Alpha Particles Based on Ta-Doped InP Converted to the Semi-Insulating State by Annealing
    Author(s) Žďánský, Karel (URE-Y)
    Gorodynskyy, Vladyslav (URE-Y)
    Pekárek, Ladislav (FZU-D)
    Source Title IEEE Transactions on Nuclear Science. Roč. 56, č. 5 (2009), s. 2997-3001. - : Institute of Electrical and Electronics Engineers
    Document TypeČlánek v odborném periodiku
    Grant KAN400670651 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    KAN401220801 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR), CZ - Czech Republic
    IBS2067354 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    CEZAV0Z20670512 - URE-Y (2005-2011)
    AV0Z10100520 - FZU-D (2005-2011)
    Languageeng
    CountryUS
    Keywords radiation detection * semiconductor doping * crystal growth
    Permanent Linkhttp://hdl.handle.net/11104/0184434
     
Number of the records: 1  

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