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Pre-edge XANES structure of Mn in (Ga,Mn)As from first principles

SYSNO	0337620
Title	Pre-edge XANES structure of Mn in (Ga,Mn)As from first principles
Title	Pre-edge XANES struktura Mn v (Ga,Mn)As vypočtená z prvních principů
Author(s)	Goncharuk, Natalya (FZU-D) Kučera, Jan (FZU-D)_RID Smrčka, Ludvík (FZU-D)_{RID, ORCID}
Source Title	Chemistry of Metals and Alloys. Roč. 2, 1-2 (2009), s. 34-38
Document Type	Článek v odborném periodiku
Grant	LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
Language	eng
Country	UA
Keywords	(Ga,Mn)As magnetic semiconductor * X-ray absorption near-edge structure * substitutional * interstitial / * defects
URL	http://www.chemetal-journal.org/
Permanent Link	http://hdl.handle.net/11104/0181571

Number of the records: 1