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Toward a low-voltage multiferroic transistor: magnetic (Ga,Mn)As under ferroelectric control

  1. 1.
    SYSNO0337207
    TitleToward a low-voltage multiferroic transistor: magnetic (Ga,Mn)As under ferroelectric control
    TitleMultiferoický transistor ovládaný slabým elektrickým polem: Magnetický (Ga,Mn)As ovládaný feroelektrickou vrstvou
    Author(s) Riester, S.W.E. (CH)
    Stolichnov, I. (CH)
    Trodahl, H.J. (CH)
    Setter, N. (CH)
    Rushforth, A.W. (GB)
    Edmonds, K. W. (GB)
    Campion, R. P. (GB)
    Foxon, C. T. (GB)
    Gallagher, B. L. (GB)
    Jungwirth, Tomáš (FZU-D) RID, ORCID
    Source Title Applied Physics Letters. Roč. 94, č. 6 (2009), 063504/1-063504/3. - : AIP Publishing
    Document TypeČlánek v odborném periodiku
    Grant LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    214499, XE - EU countries
    015728, XE - EU countries
    GEFON/06/E002 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z10100521 - FZU-D (2005-2011)
    Languageeng
    CountryUS
    Keywords Curie temperature * dielectric polarisation * erroelectric devices * ferroelectric materials * insulated gate field effect tran
    URLhttp://link.aip.org/link/?APL/94/063504
    Permanent Linkhttp://hdl.handle.net/11104/0181263
     
Number of the records: 1  

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