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The origin and control of the sources of AMR in (Ga,Mn)As devices
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SYSNO 0335861 Title The origin and control of the sources of AMR in (Ga,Mn)As devices Title Příčiny a způsob ovládání AMR v součástkách z (Ga,Mn)As Author(s) Rushforth, A.W. (GB)
Výborný, Karel (FZU-D) RID, ORCID
King, C.S. (GB)
Edmonds, K. W. (GB)
Campion, R. P. (GB)
Foxon, C. T. (GB)
Wunderlich, J. (GB)
Irvine, A.C. (GB)
Novák, Vít (FZU-D) RID, ORCID
Olejník, Kamil (FZU-D) RID, ORCID
Kovalev, A.A. (US)
Sinova, J. (US)
Jungwirth, Tomáš (FZU-D) RID, ORCID
Gallagher, B. L. (GB)Source Title Journal of Magnetism and Magnetic Materials. Roč. 321, č. 8 (2009), s. 1001-1008. - : Elsevier Document Type Článek v odborném periodiku Grant LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GEFON/06/E002 GA ČR - Czech Science Foundation (CSF) GA202/05/0575 GA ČR - Czech Science Foundation (CSF) GA202/04/1519 GA ČR - Czech Science Foundation (CSF) 015728, XE - EU countries CEZ AV0Z10100521 - FZU-D (2005-2011) Language eng Country NL Keywords ferromagnetic semiconductor * anisotropic magnetoresistance Permanent Link http://hdl.handle.net/11104/0180215
Number of the records: 1