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Intra-atomic charge re-organization at the Pb Si interface: bonding mechanism at low cover
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SYSNO 0335755 Title Intra-atomic charge re-organization at the Pb Si interface: bonding mechanism at low cover Title Intra-atomární reorganizace náboje na Pb-Si rozhraní: vazebný mechanismus při nízkém pokrytí Author(s) Švec, Martin (FZU-D) RID, ORCID
Dudr, Viktor (FZU-D)
Vondráček, Martin (FZU-D) RID, ORCID
Jelínek, Pavel (FZU-D) RID, ORCID
Mutombo, Pingo (FZU-D) RID, ORCID
Cháb, Vladimír (FZU-D) RID, ORCID
Šutara, F. (CZ)
Matolín, V. (CZ)
Prince, K. C. (IT)Source Title Surface Science. Roč. 603, č. 18 (2009), s. 2861-2869. - : Elsevier Document Type Článek v odborném periodiku Grant IAA1010413 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) IAA100100616 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z10100521 - FZU-D (2005-2011) Language eng Country NL Keywords density functional calculations * green´s functional methods * synchrotron radiation photoelectron spectroscopy x-ray scattering * lead * silicon Permanent Link http://hdl.handle.net/11104/0180134
Number of the records: 1