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A new kind of quasi-ohmic metallization in semi-insulating GaAs: study of electrical characteristics
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SYSNO 0331194 Title A new kind of quasi-ohmic metallization in semi-insulating GaAs: study of electrical characteristics Title Nový typ kvaziohmické metalizace v semiizolačním GaAs Author(s) Dubecký, F. (SK)
Zat'ko, B. (SK)
Hubík, Pavel (FZU-D) RID, ORCID
Gombia, E. (IT)
Boháček, P. (SK)
Huran, J. (SK)
Sekáčová, M. (SK)Source Title Nuclear Instruments & Methods in Physics Research Section A. Roč. 607, č. 1 (2009), 132-134. - : Elsevier Conference International Workshop on Radiation Imaging Detectors /10./, Helsinki, 29.06.2008-03.07.2008 Document Type Článek v odborném periodiku Grant IAA1010404 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) 2/7170/27, SK - Slovakia APVV-99-P06305, SK - Slovakia APVV-0459-06, SK - Slovakia CEZ AV0Z10100521 - FZU-D (2005-2011) Language eng Country NL Keywords GaAs * semi-insulating * metal-semiconductor contact * Schottky barrier * work function Permanent Link http://hdl.handle.net/11104/0176781
Number of the records: 1