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Magnetism in GaN: Gd, Dy thin layers

  1. 1.
    SYSNO0315822
    TitleMagnetism in GaN: Gd, Dy thin layers
    TitleMagnetismus v tenkých vrstvách GaN: Gd, Dy
    Author(s) Sofer, Z. (CZ)
    Sedmidubský, D. (CZ)
    Buchal, C. (DE)
    Hardtdegen, H. (DE)
    Mikulics, M. (DE)
    Peřina, Vratislav (UJF-V) RID
    Macková, Anna (UJF-V) RID, ORCID, SAI
    Maryško, Miroslav (FZU-D) RID
    Hejtmánek, Jiří (FZU-D) RID, ORCID
    Václavů, M. (CZ)
    Source Title16th International Conference on Ion Beam Modification of Materials Book of Abstracts. S. 439-439. - Dresden : Institute of Ion Beam Physics and Materials Research, Forschungzentrum Dresden-Rossendorf, 2008
    Conference 16th International Conference on Ion Beam Modification of Materials, Dresden, 31.08.2008-05.09.2008
    Document TypeA2
    CEZAV0Z10480505 - UJF-V (2005-2011)
    AV0Z10100502 - FZU-D (2005-2011)
    Languageeng
    CountryDE
    Keywords magnetic semiconductors * III–V semiconductors * ion implantation of rare earth
    Permanent Linkhttp://hdl.handle.net/11104/0165917
     
Number of the records: 1  

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