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Growth and properties of InAs/In.sub.x./sub.Ga.sub.1-x./sub.As/GaAs quantum dot structures
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SYSNO 0308047 Title Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures Title Růst a vlastnosti InAs/InxGa1-xAs/GaAs struktur s kvantovými tečkami Author(s) Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Vyskočil, Jan (FZU-D) RID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Kuldová, Karla (FZU-D) RID, ORCID
Melichar, Karel (FZU-D)
Šimeček, Tomislav (FZU-D)Source Title Journal of Crystal Growth. Roč. 310, 7-9 (2008), s. 2229-2233. - : Elsevier Document Type Článek v odborném periodiku Grant KJB101630601 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) IAA100100719 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GA202/06/0718 GA ČR - Czech Science Foundation (CSF) GA202/05/0242 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) Language eng Country NL Keywords nanostructures * metalorganic vapor-phase epitaxy * semiconducting III–V materials Permanent Link http://hdl.handle.net/11104/0160642
Number of the records: 1