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Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
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SYSNO 0085159 Title Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs Title Vlastnosti InAs/GaAs kvantových teček přerůstaných InGaAs připravených pomocí MOVPE Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Mates, Tomáš (FZU-D) RID, ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Melichar, Karel (FZU-D)
Šimeček, Tomislav (FZU-D)Source Title Journal of Crystal Growth. Roč. 298, - (2007), s. 582-858. - : Elsevier Document Type Článek v odborném periodiku Grant KJB101630601 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GA202/06/0718 GA ČR - Czech Science Foundation (CSF) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic CEZ AV0Z10100521 - FZU-D (2005-2011) Language eng Country NL Keywords nanostructures * metalorganic vapor phase epitaxy * arsenides * semiconducting III-V materials Permanent Link http://hdl.handle.net/11104/0147727
Number of the records: 1