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Coulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor

  1. 1.
    SYSNO0079015
    TitleCoulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor
    TitleAnisotropní magnetoresistence v režimu Coulombovské blokády v jednoelektronovém transistoru na bázi (Ga,Mn)As
    Author(s) Wunderlich, J. (GB)
    Jungwirth, Tomáš (FZU-D) RID, ORCID
    Kaestner, B. (GB)
    Irvine, A.C. (GB)
    Shick, Alexander (FZU-D) RID, ORCID
    Stone, N. (GB)
    Wang, K. Y. (GB)
    Rana, U. (GB)
    Giddings, A.D. (GB)
    Foxon, C. T. (GB)
    Campion, R. P. (GB)
    Williams, D.A. (GB)
    Gallagher, B. L. (GB)
    Source Title Physical Review Letters. Roč. 97, č. 7 (2006), 077201/1-077201/4. - : American Physical Society
    Document TypeČlánek v odborném periodiku
    Grant GA202/05/0575 GA ČR - Czech Science Foundation (CSF)
    LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    GR/S81407/01, GB - United Kingdom
    CEZAV0Z10100521 - FZU-D (2005-2011)
    Languageeng
    CountryUS
    Keywords anisotropic magnetoresistance * Coulomb blockade * single electron transistor
    Permanent Linkhttp://hdl.handle.net/11104/0143916
     
Number of the records: 1  

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