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Optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO
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SYSNO ASEP 0521781 Document Type A - Abstract R&D Document Type O - Ostatní Title Optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO Author(s) Remeš, Zdeněk (FZU-D) RID, ORCID
Chang, Yu-Ying (FZU-D)
Stuchlíková, The-Ha (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Shu, H.H. (TW)Number of authors 5 Source Title Book of Abstracts of the 29th Joint Seminar of the Development of Materials Science in Research and Education (DMS – RE 2019). - Bratislava : STU Bratislava, 2019 / Behúlová M. ; Kožíšek Z. ; Papánková B. - ISBN 978-80-8208-019-6
S. 41-41Number of pages 1 s. Action 29th Joint Seminar Development of Materials Science in Research and Education (DMS-RE2019) Event date 02.09.2019 - 06.09.2019 VEvent location Nová Lesná Country SK - Slovakia Event type EUR Language eng - English Country SK - Slovakia Keywords ZnO ; a-SiC:H Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects EF16_019/0000760 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GC19-02858J GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation Here we will study the optoelectronic properties of hydrogenated amorphous substoichiometric a-SiC:H with low carbon content deposited on semi-transparent ZnO electrode using otical absorption spectroscopy PDS (photothermal deflection spectroscopy), Fourier Transform Infrared Spectroscopy (FTIR), photoluminescence and electroluminescence spectroscopy. The infrared absorbance spectra confirm low carbon content x up to 0.1 in a-SixC1-x:H for SiH4/CH4 ratio 1:3. The increasing CH4 concentration in the H2/SiH4/CH4 flow rate decreases the growth rate of a-SixC1-x:H, increases x and lattice disorder and broadens the band gap to higher energy in agreement with previous publications
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2020
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