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Increasing scintillator active region thickness by InGaN/GaN QW number
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SYSNO ASEP 0496184 Document Type A - Abstract R&D Document Type O - Ostatní Title Increasing scintillator active region thickness by InGaN/GaN QW number Author(s) Vaněk, Tomáš (FZU-D) ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hubáček, Tomáš (FZU-D) ORCID
Kuldová, Karla (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Dominec, Filip (FZU-D) RID, ORCID
Zíková, Markéta (FZU-D) RID
Vetushka, Aliaksi (FZU-D) RID, ORCIDNumber of authors 9 Source Title Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. - : University of Warsaw, 2018
S. 151-151Number of pages 1 s. Action International Symposium on Growth of III-Nitrides ISGN-7 Event date 05.08.2018 - 10.08.2018 VEvent location Warsaw Country PL - Poland Event type WRD Language eng - English Country PL - Poland Keywords InGaN/GaN ; QW number Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-15569S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation Luminescence results of InGaN/GaN multiple quantum well (QW) structures with number of QWs from 10 to 60 are studied in this work.The aim is to optimize a thickness of active region for maximization of the intensity of faster blue QW emission and suppression of the slower QW defect band luminiscence, which is undesired for fast scintillator application. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2019
Number of the records: 1