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Nanocrystalline boron-doped diamond as a corrosion-resistant anode for water oxidation via Si photoelectrodes

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    SYSNO ASEP0493543
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleNanocrystalline boron-doped diamond as a corrosion-resistant anode for water oxidation via Si photoelectrodes
    Author(s) Ashcheulov, Petr (FZU-D) ORCID, RID
    Taylor, Andrew (FZU-D) RID, ORCID
    Mortet, Vincent (FZU-D) RID, ORCID
    Poruba, A. (CZ)
    Le Formal, F. (CH)
    Krýsová, Hana (UFCH-W) RID, ORCID
    Klementová, Mariana (FZU-D) RID, ORCID
    Hubík, Pavel (FZU-D) RID, ORCID
    Kopeček, Jaromír (FZU-D) RID, ORCID
    Lorinčík, J. (CZ)
    Yum, J. H. (CH)
    Kratochvílová, Irena (FZU-D) RID, ORCID, SAI
    Kavan, Ladislav (UFCH-W) RID, ORCID
    Sivula, K. (CH)
    Number of authors14
    Source TitleACS Applied Materials and Interfaces. - : American Chemical Society - ISSN 1944-8244
    Roč. 10, č. 35 (2018), s. 29552-29564
    Number of pages13 s.
    Languageeng - English
    CountryUS - United States
    Keywordsnanocrystalline diamond ; photoanode ; protective coating ; silicon photoelectrodes ; transparent conductive film ; water splitting
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    Subject RIV - cooperationJ. Heyrovsky Institute of Physical Chemistry - Physical ; Theoretical Chemistry
    R&D ProjectsLO1409 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    LM2015088 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Institutional supportFZU-D - RVO:68378271 ; UFCH-W - RVO:61388955
    UT WOS000444355700036
    EID SCOPUS85052434731
    DOI10.1021/acsami.8b08714
    AnnotationDue to its high sensitivity to corrosion, the use of Si in direct photoelectrochemical water splitting systems that convert solar energy into chemical fuels has been greatly limited.Therefore, the development of low-cost materials resistant to corrosion under oxidizing conditions is an important goal towards a suitable protection of otherwise unstable semiconductors used in photoelectrochemical cells. Here we report on the development of a protective coating based on thin and electrically conductive nanocrystalline boron-doped diamond (BDD) layers. We found that BDD layers protect the underlying Si photoelectrodes over a wide pH range (1-14) in aqueous electrolyte solutions. BDD layer maintains an efficient charge carrier transfer from the underlying silicon to the electrolyte solution.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2019
Number of the records: 1  

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