Number of the records: 1  

The hydrogen plasma doping of nanocrystalline ZnO thin flms

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    SYSNO ASEP0483629
    Document TypeA - Abstract
    R&D Document TypeO - Ostatní
    TitleThe hydrogen plasma doping of nanocrystalline ZnO thin flms
    Author(s) Chang, Yu-Ying (FZU-D)
    Remeš, Zdeněk (FZU-D) RID, ORCID
    Stuchlík, Jiří (FZU-D) RID, ORCID
    Number of authors3
    Source TitleE-MRS 2017 Spring Meeting and Exhibit. - Strasbourg : European Materials Research Society, 2017
    Number of pages1 s.
    Publication formOnline - E
    ActionE-MRS 2017 Spring Meeting and Exhibit
    Event date22.05.2017 - 26.05.2017
    VEvent locationStrasbourg
    CountryFR - France
    Event typeWRD
    Languageeng - English
    CountryFR - France
    KeywordsZnO ; magnetron sputtering ; hydrogen ; doping
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGC16-10429J GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    AnnotationWe study the effect on the optical and electrical properties of hydrogen plasma treatment of the nominally undoped, nanocrystalline ZnO thin films deposited by DC reactive magnetron sputtering of Zn target in the gas mixture of argon and oxygen plasma. After hydrogen plasma treatment, the increase of the electrical conductivity and the increase of the infrared optical absorption was detected and related to the increase of the free carrier concentration. To confirm this relation, the mobility and carrier concentration were measured by temperature dependent electrical resistivity and Hall effect using the van der Pauw method. We also investigated the localized defect states below the optical absorption edge using optical absorption spectroscopy and photoluminescence in a broad spectral range from near UV to near IR. We conclude that the increase of the electrical conductivity is indeed confirmed to be related to the increase of the free carrier concentration.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2018
Number of the records: 1  

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