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Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications
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SYSNO ASEP 0477154 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Kuldová, Karla (FZU-D) RID, ORCID
Nikl, Martin (FZU-D) RID, ORCID, SAI
Pacherová, Oliva (FZU-D) RID, ORCID
Oswald, Jiří (FZU-D) RID, ORCID
Hubáček, Tomáš (FZU-D) ORCID
Zíková, Markéta (FZU-D) RID
Brůža, P. (CZ)
Pánek, D. (CZ)
Blažek, K. (CZ)
Ledoux, G. (FR)
Dujardin, C. (FR)
Heuken, M. (DE)
Hulicius, Eduard (FZU-D) RID, ORCID, SAINumber of authors 15 Article number 1003617 Source Title Fourth Conference on Sensors, MEMS, and Electro-Optic Systems. - Bellingham : SPIE, 2017 / du Plessis M. - ISSN 0277-786X - ISBN 978-151060513-8 Pages s. 1-15 Number of pages 4 s. Publication form Print - P Action South African Conference on Sensors, MEMS and Electro-Optical Systems (SMEOS) /4./ Event date 18.09.2016 - 20.09.2016 VEvent location Skukuza Country ZA - South Africa Event type WRD Language eng - English Country US - United States Keywords gallium nitride ; indium gallium nitride ; quantum wells ; scintillators ; sensors ; luminescence ; excitons ; scintillation ; radiation ; resistance Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LM2015087 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-15569S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 UT WOS 000394537200042 EID SCOPUS 85014633065 DOI 10.1117/12.2244786 Annotation InGaN/GaN multiple QW structures were prepared by MOVPE and characterized by high resolution X-ray diffraction. We demonstrate structure suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft X-ray source. The photo-, radio- and cathodo-luminescence were measured. We observed double peak luminescence governed by different recombination mechanisms: exciton in QW and related to defects. We have shown that for obtaining fast and intensive luminescence response proper structure design is required. The radioluminescence decay time of QW exciton maximum decreased from 16 ns to 4 ns when the QW thickness was decreased from 2.4 to 2 nm. We have proved suitability of InGaN/GaN structures for fast scintillator application for electron or other particle radiation detection. For x-ray detection the fast scintillation response would be hard to achieve due to the dominant slow defect luminescence maximum. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018
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