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Nanostructures grown by MOVPE InAs/InGaAs/Ga(Sb)As quantum dot and GaN/InGaN quantum well structures
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SYSNO ASEP 0463746 Document Type A - Abstract R&D Document Type O - Ostatní Title Nanostructures grown by MOVPE InAs/InGaAs/Ga(Sb)As quantum dot and GaN/InGaN quantum well structures Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Zíková, Markéta (FZU-D) RID
Vyskočil, Jan (FZU-D) RID
Kuldová, Karla (FZU-D) RID, ORCID
Melichar, Karel (FZU-D)
Hubáček, Tomáš (FZU-D) ORCID
Walachová, J. (CZ)
Vaniš, J. (CZ)
Křápek, V. (CZ)
Humlíček, J. (CZ)
Nikl, Martin (FZU-D) RID, ORCID, SAI
Pacherová, Oliva (FZU-D) RID, ORCID
Brůža, P. (CZ)
Pánek, D. (CZ)
Foltynski, B. (DE)
Oeztuerk, M. (CZ)
Heuken, M. (DE)
Hulicius, Eduard (FZU-D) RID, ORCID, SAISource Title GCCCG-1/DKT2016. - Dresden : TU Dresden, 2016
S. 38Number of pages 1 s. Publication form Print - P Action German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./ Event date 16.03.2016 - 18.03.2016 VEvent location Dresden Country DE - Germany Event type EUR Language eng - English Country DE - Germany Keywords MOVPE ; InAs quantum dot ; GaAsSb SRL ; GaInN quantum well ; GaN ; GaAs Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA13-15286S GA ČR - Czech Science Foundation (CSF) GP14-21285P GA ČR - Czech Science Foundation (CSF) LM2011026 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation This review talk summarizes some of results achieved during last years of our quantum dot(QD) research. We show that the QD shape (aspect ratio and elongation) significantly influence the QD photoluminescence (PL) spectrum. Magnetophotoluminescence (MPL) can
be used for determination of the anisotropy of QDs. While the calculated shifts in magnetic field of the energies of higher radiative transitions are found to be sensitive to the lateral elongation, the shift of the lowest transition is determined mainly by the exciton effective mass. This can be used for determining the effective mass and the elongation fairly reliably from the MPL spectra displaying at least two resolved bands. We found the ways to control the QD elongation for vertically correlated InAs/GaAs QDs and consequently the energy difference between PL transitions by adjusting properly the spacer layer thickness. The main goal was to redshift QD PL emission to telecommunication wavelengths of MOVPE prepared InAs/GaAs QDs using InGaAs or GaAsSb strain reducing layer (SRL).The simulation of electron structure in InAs QDs covered by GaAsSb SRL and our experimental results reveal the importance of increasing QD size for obtaining a longer wavelength PL from the type I heterostructure. The type II structure covered by GaAsSb SRL with Sb content near 30 % enabled us to achieve extremely long emission wavelength at 1.8 μm. The high amount of antimony in the SRL causes the preservation of QD size. Increased QD size prolongs the PL wavelength. The type II structures with ground state electrons confined in InAs QDs and ground state holes in GaAsSb SRL have a strong potential in detector and solar cell applications
as is demonstrated by photocurrent measurement.Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2017
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